THE INFLUENCE OF RAPID THERMAL TRANSIENTS ON CLASTIC-PLASTIC RATCHETTINGGOODMAN AM.1981; ENG. STRUCT.; GBR; DA. 1981; VOL. 3; NO 1; PP. 17-26; BIBL. 8 REF.Article

OPTICAL INTERFERENCE METHOD FOR THE APPROXIMATE DETERMINATION OF REFRACTIVE INDEX AND THICKNESS OF A TRANSPARENT LAYERGOODMAN AM.1978; APPL. OPT.; USA; DA. 1978; VOL. 17; NO 17; PP. 2779-2787; BIBL. 34 REF.Article

SEMICONDUCTOR MEASUREMENT TECHNOLOGY. SUPPRESSION OF PREMATURE DIELECTRIC BREAKDOWN FOR HIGH-VOLTAGE CAPACITANCE MEASUREMENTS.GOODMAN AM.1977; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1977; NO 400-37; PP. (26P.); BIBL. 4 REF.Serial Issue

IMSADF: A TOOL FOR PROGRAMMER PRODUCTIVITYGOODMAN AM.1980; DATA BASE; USA; DA. 1980; VOL. 11; NO 3; PP. 106-113; BIBL. 8 REF.Article

SEMICONDUCTOR MEASUREMENT TECHNOLOGY: A 25-KV BIAS-ISOLATION UNIT FOR 1-MHZ CAPACITANCE AND CONDUCTANCE MEASUREMENTS.GOODMAN AM.1977; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1977; NO 400-40; PP. (56P.); BIBL. 9 REF.Serial Issue

SAFE OPERATION OF CAPACITANCE METERS USING HIGH APPLIED-BIAS VOLTAGE.GOODMAN AM.1976; R.C.A. REV.; U.S.A.; DA. 1976; VOL. 37; NO 4; PP. 491-514; BIBL. 3 REF.Article

AN APPROXIMATE MODEL OF THE BEAM-BLOCKING CONTACT IN A PBO VIDICON.GOODMAN AM.1975; R.C.A. REV.; U.S.A.; DA. 1975; VOL. 36; NO 3; PP. 408-424; BIBL. 21 REF.Article

AN INVESTIGATION OF THE SILICON-SAPPHIRE INTERFACE USING THE MIS CAPACITANCE METHOD.GOODMAN AM.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 2; PP. 63-65; BIBL. 13 REF.Article

SILICON-WAFER-SURFACE DAMAGE REVEALED BY SURFACE PHOTOVOLTAGE MEASUREMENTSGOODMAN AM.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 11; PART. 1; PP. 7561-7565; BIBL. 7 REF.Article

A 25 KV BIAS-ISOLATION UNIT FOR 1-MHZ CAPACITANCE AND CONDUCTANCE MEASUREMENTS.GOODMAN AM.1977; R.C.A. REV.; U.S.A.; DA. 1977; VOL. 38; NO 4; PP. 512-532; BIBL. 9 REF.Article

SEMICONDUCTOR MEASUREMENT TECHNOLOGY: SAFE OPERATION OF CAPACITANCE METERS USING HIGH APPLIED-BIAS VOLTAGE.GOODMAN AM.1976; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1976; NO 400-34; PP. 1-49Serial Issue

A USEFUL MODIFICATION OF THE TECHNIQUE FOR MEASURING CAPACITANCE AS A FUNCTION OF VOLTAGE.GOODMAN AM.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 12; PP. 753-757; BIBL. 5 REF.Article

SUPPRESSION OF PREMATURE DIELECTRIC BREAKDOWN FOR HIGH-VOLTAGE CAPACITANCE MEASUREMENTS.GOODMAN AM.1977; R.C.A. REV.; U.S.A.; DA. 1977; VOL. 38; NO 3; PP. 436-442; BIBL. 4 REF.Article

STUDIES IN B₁₂-DEFICIENT MONKEYS WITH COMBINED SYSTEM DISEASE. I: B₁₂-DEFICIENT PATTERNS IN BONE MARROW DEOXYURIDINE SUPPRESSION TESTS WITHOUT MORPHOLOGIC OR FUNCTIONAL ABNORMALITIESGOODMAN AM; HARRIS JW.1980; J. LAB. CLIN. MED.; ISSN 0022-2143; USA; DA. 1980; VOL. 96; NO 4; PP. 722-733; BIBL. 47 REF.Article

THE EFFECTS OF OXIDATION AND HYDROGEN ANNEALING ON THE SILICON-SAPPHIRE-INTERFACE REGION OF SOS.GOODMAN AM; WEITZEL CE.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 215-218; BIBL. 8 REF.Article

THE EFFECTS OF OXYGEN DOPING AND SUBSEQUENT ANNEALING IN NITROGEN ON THE STRUCTURE OF POLYCRYSTALLINE SILICONMCGINN JT; GOODMAN AM.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 9; PP. 601-604; BIBL. 11 REF.Article

THE EFFECT OF ELECTRON-BEAM ALUMINIZATION ON THE SI-SAPPHIRE INTERFACE.GOODMAN AM; WEITZEL CE.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 2; PP. 114-117; BIBL. 21 REF.Article

WETTING OF THIN LAYERS OF SIO₂ BY WATERWILLIAMS R; GOODMAN AM.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 10; PP. 531-532; BIBL. 13 REF.Article

AES AND XPS STUDIES OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) LAYERSTHOMAS JH III; GOODMAN AM.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 10; PP. 1766-1770; BIBL. 18 REF.Article

A VERSATILE HIGH-VOLTAGE BIAS SUPPLY FOR EXTENDED RANGE MIS C(V) AND G(V) MEASUREMENTSKUCZER P; HOOK HO; GOODMAN AM et al.1978; R.C.A. REV.; USA; DA. 1978; VOL. 39; NO 2; PP. 309-339; BIBL. 5 REF.Article

THE RELATIVE DIELECTRIC CONSTANT OF TWO SEMICONDUCTOR PASSIVATION GLASSESGOODMAN AM; HANG KW; BREECE JM et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 822-824; BIBL. 4 REF.Article

DIFFERENCES IN RED CELL MEMBRANE PROTEINS IN RHESUS MONKEY ERYTHROCYTESBALLAS SK; GOODMAN AM; STOLL DB et al.1981; COMP. BIOCHEM. PHYSIOL., B; ISSN 0305-0491; GBR; DA. 1981; VOL. 68; NO 3; PP. 421-423; BIBL. 12 REF.Article

AZATHIOPRINE-INDUCED PANCYTOPENIA: OCCURRENCE IN TWO PATIENTS WITH CONNECTIVE-TISSUE DISEASESBACON BR; TREUHAFT WH; GOODMAN AM et al.1981; ARCH. INTERN. MED. (1960); ISSN 0003-9926; USA; DA. 1981; VOL. 141; NO 2; PP. 223-226; BIBL. 23 REF.Article

SEMICONDUCTOR MEASUREMENT TECHNOLOGY: A VERSATILE HIGH-VOLTAGE BIAS SUPPLY FOR EXTENDED RANGE MIS C(V) AND G(V) MEASUREMENTS.KUCZER P; HOOK HO; GOODMAN AM et al.1977; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1977; NO 400-41; PP. (68P.); BIBL. 5 REF.Serial Issue

RETINAL ABNORMALITIES ASSOCIATED WITH ANEMIAAISEN ML; BACON BR; GOODMAN AM et al.1983; ARCHIVES OF OPHTHALMOLOGY; ISSN 0003-9950; USA; DA. 1983; VOL. 101; NO 7; PP. 1049-1052; BIBL. 14 REF.Article